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This study describes the fabrication of molybdenum disulfide (MoS2) field-effect transistors (FETs) using adhesion lithography and self-assembled monolayer (SAM)-based gate dielectrics. The adhesion lithography involves the formation of a SAM on metal oxides and selective removal of metal layer from the surface of SAM. Electrical characteristics of MoS2 FETs in this study resemble those of MoS2 FETs...
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