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We present the design and measurement of a continuous-time, accelerated, reconfigurable Leaky Integrate and Fire (LIF) neuron model emulated in 65-nm CMOS technology. The neuron circuit is designed as a sub-circuit of our highly integrated neuromorphic prototype chip, the “HICANN-DLS”. The design is geared towards testability and debug features, as well as area and power efficiency. Each neuron in...
A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III–V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate...
Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number...
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