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Digital technologies are key for the advent and growth of Internet of Things. For the devices closest to the users, they must show performances criteria different than from than needed in pure computing-intensive applications. In particular, the ability to mix digital edge performances with RF or sensor capabilities is key, and some well-adapted technologies, such as FD-SOI, are detailed in the present...
In parallel to presentations documenting the performance of state-of-the-art FDSOI CMOS devices, we discuss selected physical mechanisms and emerging device architectures enabled by FDSOI technology.
We report on the layout effects in strained SiGe channel FDSOI pMOSFETS down to 20nm gate length. Two SiGe integration schemes are compared: the SiGe-first approach, with Ge-enrichment performed prior to the STI module and the SiGe-last approach using only a SiGe epitaxy after the STI module. We evidence reduced layout effects in the SiGe-last integration featuring Si/SiGe bilayer. SiGe-last shows...
Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum Drift-Diffusion (QDD) solvers, such as the quasi-Fermi level, the quantum potential...
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