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Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO3-based resistive switches covering the timescale from <10 ns up to 104 s. The power-dependence of the SET kinetics and the switching energy...
In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (∼ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage...
A two terminal nanoscale device showing inherent stochastic behavior can be a key enabler for a wide range of applications such as stochastic computing, machine learning and neuromorphic engineering. In this article we investigate the inherent stochasticity associated with two key attributes of phase-change memory devices, namely, threshold switching and memory switching. The physical origin of this...
Resistive switching memories have been identified as an enabling technology for a variety of emerging computing applications, including neuromorphic and logic-in-memory computing. For example, analog tuning of the memory state combined with high integration density of memristors is needed for very compact implementation of synapses, the most numerous devices in artificial neural networks and would...
Micro/nano-electromechanical resonator based mechanical computing has recently attracted significant attention. However, its full realization has been hindered by the difficulty in realizing complex combinational logics, in which the logic function is constructed by cascading multiple smaller logic blocks. In this work we report an alternative approach for implementation of digital logic core elements,...
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