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We give here an overview on our results on the large-area growth of 2D transition metal dichalcogenide semiconductors MoS2, MoSe2, WSe2 using chemical vapor deposition. The growth of MoS2 on sapphire occurs epitaxially with the crystalline orientation of the MoS2 film closely matching that of the sapphire substrate, resulting in a high-quality continuous film. The use of H2S results in more control...
As CMOS device scaling approaches to sub 10-nm node, quantum size effects become significant even at room temperature. Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Possible...
Ferroelectric random access memories (FRAM) are nonvolatile memories which allow a fast access time and a low power consumption. State-of-the-art devices are based on the perovskite lead zirconate titanate (PZT), which suffers from CMOS incompatibility resulting in scaling issues. The discovery of the ferroelectricity in doped hafnium oxide enabled scaled 3D memory devices. A variety of dopants has...
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