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This study describes the fabrication of molybdenum disulfide (MoS2) field-effect transistors (FETs) using adhesion lithography and self-assembled monolayer (SAM)-based gate dielectrics. The adhesion lithography involves the formation of a SAM on metal oxides and selective removal of metal layer from the surface of SAM. Electrical characteristics of MoS2 FETs in this study resemble those of MoS2 FETs...
We investigated the floating gate memory based on MoS2 channel with metal nanoparticle charge trapping layer and polymer tunneling dielectric. Here, highly conformal and stable polymer insulator layer deposited via initiated chemical vapor deposition (iCVD) facilitates the fabricated floating gate memory to endure a substantial electrical stress significantly. To form a selective density and controllable...
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