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In this paper, splitting of peak switch voltage by series connected transistors in the class E inverter is proposed. In this method, peak switch voltage of class E inverter is reduced to half of conventional because shunt capacitor voltage is divided by two switches. Key feature of this method is that drive signal source of each switch can be grounded. Namely, transformer is not required in this method...
This paper presents the analysis of problem as to when the GaN HEMT (Gallium nitride high electron mobility transistor) is applied to power conversion system. Compared to state-of-the-art super junction Si (Silicon) MOSFET (Metal oxide semiconductor field effect transistor), the FOM (Figure of merit) is much better because of heterojunction structure and wide band gap characteristics. However, designing...
To reduce the life cycle cost of solar power plants, high conversion efficiency for inverters is necessary. The advantages of SiC MOSFETs include not only lower conduction loss but also the ability of high-speed switching. Lower switching loss is derived from high-speed switching. Especially with SiC MOSFETs, the tail current and switching recovery loss can be drastically reduced compared with Si...
The electronic circuits are miniaturized because the technique on integrated circuits has been developing. The reactance components of converters are miniaturized by using high switching frequency. The resonant converters are useful because of the low switching loss in semiconductor switches. At the resonant converters, raising or lowering output voltage is fundamentally controlled by the switching...
In this paper, the efficiency limits of power electronic converters are investigated from a semiconductor point of view. The approach is presented on the example of a hard switching half bridge while taking Si, SiC and GaN devices into account. Beside parasitic effects of the semiconductors itself, further converter non-idealities and limits from a thermal point of view are discussed. All in all,...
To drive SiC power module with high-speed switching, the stray inductance becomes a key factor in converter design. In this work, the stray inductances of module and peripheral circuits are investigated by simulation and measurement. With the loop stray inductance of 29.2 nH, the module is tested up to 800 V and 50 A with insignificant EMI issues of ringing and overshoot. And the dv/dt ratios at turn-off...
Communication relay stations often suffer from common-mode noise generated by high speed switching in a boost chopper equipped for power supply. This problem can be addressed by applying soft-switching techniques to the boost chopper, although this can lead to significant increase in the circuit volume. To address this difficulty, this paper proposes a novel passive regenerative turn-off snubber applicable...
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