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The early failure detection of induction motors is considered very important in order to ensure their stability and high performance. Thus, condition monitoring of these motors are essential to ensure that. However, the effectiveness of the fault diagnosis depends on the quality of the fault features selection that is used in the adopted method. In this way, this paper will present a comparative study...
Gallium Nitride (GaN) based power devices have the potential to achieve higher efficiency and higher switching frequency than those possible with Silicon (Si) power devices. In literature, GaN based converters are claimed to offer higher power density. However, a detailed comparative analysis on the power density of GaN and Si based low power dc-dc flyback converter is not reported. In this paper,...
The new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest...
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