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This paper presents a heterodyne measurement system of the pulse-to-pulse (P2P) stability and its application to time-domain measurements of a GaN HEMT microwave power amplifier. Envelope and P2P stability measurements are performed for an irregular RF pulse train which integrates a long silence between each pulse sequence. This paper is focused on the impact of RF pulse width and duty cycle on each...
Under PolHEMT project focused on AlGaN/GaN HEMT on truly bulk semi-insulating GaN substrate technology development a power amplifier using this type of polish transistor was designed and fabricated. The amplifier achieves the parameters as follow: output power at 1dB G.C.P. more than 31dBm, max power density of 4,15W/mm, small-signal gain |S21|>12,5dB, over a 2,5GHz to 3,5GHz frequency range.
In this contribution, a design, implementation, and experimental results of a highly efficient, multi-octave bandwidth power amplifier (PA) using a 25 W packaged GaN-HEMT are presented. Source/load-pull setup is used to extract the optimum source/load impedances across 1.1 – 2.7 GHz. The harmonics impact is considered to improve the power amplifier efficiency. Utilizing the characteristics of FET...
A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for...
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7GHz PA based on 0.25 µm GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated...
This paper describes a hybrid microwave integrated circuit (MIC) power amplifier (PA) covering the extended Ku-band uplink (13.75 – 14.5 GHz) for satellite communication. A high relative permittivity alumina substrate and a 250nm GaN bare-die technology have been chosen realizing the amplifier. The designed PA was characterized in its small- and large-signal behavior. The measured device performance...
The paper presents the results of a project leading to design and fabrication of a transmitting-receiving module destined for application in an active electronically scanned array (AESA). The module is supposed to operate in the band from 9 GHz to 10 GHz. GaAs technology core chip is applied and it is used to drive power amplifiers based on GaN technology. The shape of the module enclosure follows...
In this paper, authors present the preliminary measurements of a PWM-based transmitter. It is realised by cascading a pulse width modulator and a driver stage (PWCD), with a high efficiency Class E switched mode power amplifier (SMPA). The PWCD was realized by using 250nm BiCMOS process from IHP (SGB25V GD), while the SMPA was realized by using a packaged GaN device from UMS (CHK040A-SOA). The preliminary...
Within this special session paper we present a selection of our designed and prototyped silicon integrated circuits realized in SiGe BiCMOS technology at 10 GHz and 35 GHz. The circuits have been prototyped within European Space Agency contracts that SIRC implements as well as in an NCBiR project. The ICs, prototyped in IHP SG25V and SG13S technologies, have been mounted as chip on board and measured...
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