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In this paper a novel 61GHz radar sensor node for industrial positioning and distance measurement is presented. The sensor provides numerous functions enabling a broad range of signal processing technologies and is designed with regard to cost-efficient implementation only using commercial available components without limiting the area of possible applications. Beside the requirement analysis and...
A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for...
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7GHz PA based on 0.25 µm GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated...
Within this special session paper we present a selection of our designed and prototyped silicon integrated circuits realized in SiGe BiCMOS technology at 10 GHz and 35 GHz. The circuits have been prototyped within European Space Agency contracts that SIRC implements as well as in an NCBiR project. The ICs, prototyped in IHP SG25V and SG13S technologies, have been mounted as chip on board and measured...
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