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We report on the photoresponse of AlGaN/GaN HEMT to THz radiation of low and high intensity. We show that the response vs. gate bias dependence can be described by the theory of Dyakonov-Shur in the whole range of radiation intensity. Unusual behavior of the photoresponse vs. intensity was observed under laser irradiation: a quadratic increase of the response followed by saturation. We speculate that...
Under PolHEMT project focused on AlGaN/GaN HEMT on truly bulk semi-insulating GaN substrate technology development a power amplifier using this type of polish transistor was designed and fabricated. The amplifier achieves the parameters as follow: output power at 1dB G.C.P. more than 31dBm, max power density of 4,15W/mm, small-signal gain |S21|>12,5dB, over a 2,5GHz to 3,5GHz frequency range.
In this paper an analytical model is developed to characterize the performance of GaN-based microwave HEMTs. To theoretically predict mobility and sheet carrier concentration in 2-dimentional electron gas (2DEG) of GaN HEMTs extraction procedure is proposed. Presented model is based on physical relationships and I–V characteristics without introducing any semiempirical parameter. Results are compared...
A model including effects of distributed gate in High Electron Mobility Transistors (HEMTs) is presented. An expression for equivalent gate impedance is derived for general structure described by [Z] matrix, therefore it can be applied to any structure that has similar distributed nature.
This paper describes a laboratory and methodology for the complete assessment of the reliability of microwave and power Gallium Nitride (GaN) devices. Examples related to deep level effects in GaN High Electron Mobility Transistors (HEMTs), to HEMT gate degradation and time dependent breakdown effects are described.
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