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This paper presents a heterodyne measurement system of the pulse-to-pulse (P2P) stability and its application to time-domain measurements of a GaN HEMT microwave power amplifier. Envelope and P2P stability measurements are performed for an irregular RF pulse train which integrates a long silence between each pulse sequence. This paper is focused on the impact of RF pulse width and duty cycle on each...
A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 µm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in...
This paper reports on GaN transistors having a power output in excess of 1kW for use at L-band frequencies. A 1200W GaN HEMT will be reported with 85% efficiency, this is believed to be the highest power and efficiency combination ever reported for an L band transistor. The importance of using gate pulsing is illustrated to achieve these high efficiencies. The development of GaN transistors that can...
Under PolHEMT project focused on AlGaN/GaN HEMT on truly bulk semi-insulating GaN substrate technology development a power amplifier using this type of polish transistor was designed and fabricated. The amplifier achieves the parameters as follow: output power at 1dB G.C.P. more than 31dBm, max power density of 4,15W/mm, small-signal gain |S21|>12,5dB, over a 2,5GHz to 3,5GHz frequency range.
A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for...
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7GHz PA based on 0.25 µm GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated...
We present results of investigations of Plasma Assisted Molecular Beam Epitaxy (PAMBE) - grown GaN/AlGaN High Electron Mobility Transistor (HEMT) structures for fabrication of detectors and emitters operating in THz spectral range. These devices are standard HEMT structures but equipped with additional antennas that ensure THz radiation coupling. THz detectors and emitters were processed using different...
This paper describes a hybrid microwave integrated circuit (MIC) power amplifier (PA) covering the extended Ku-band uplink (13.75 – 14.5 GHz) for satellite communication. A high relative permittivity alumina substrate and a 250nm GaN bare-die technology have been chosen realizing the amplifier. The designed PA was characterized in its small- and large-signal behavior. The measured device performance...
The paper presents the results of a project leading to design and fabrication of a transmitting-receiving module destined for application in an active electronically scanned array (AESA). The module is supposed to operate in the band from 9 GHz to 10 GHz. GaAs technology core chip is applied and it is used to drive power amplifiers based on GaN technology. The shape of the module enclosure follows...
In this paper, authors present the preliminary measurements of a PWM-based transmitter. It is realised by cascading a pulse width modulator and a driver stage (PWCD), with a high efficiency Class E switched mode power amplifier (SMPA). The PWCD was realized by using 250nm BiCMOS process from IHP (SGB25V GD), while the SMPA was realized by using a packaged GaN device from UMS (CHK040A-SOA). The preliminary...
In this paper, we report the preliminary results of an Engineering Model of a complete SSPA, developed for Galileo satellite system (E1 band, 1575.42 MHz), and based on UMS GaN (GH50-10) technology. The SSPA includes also satellite interfaces (e.g., internal power supply generation unit, telemetry and telecommand functionalities) and measured results show an output power larger than the targeted 230W,...
AlGaN/GaN technology provides a lot of power density, which causes a thermal effect and degrades the whole electronic characteristics of the component. The local heating source appears when the component is biased. Moreover, radar applications work in pulsed rate and emphasize the impact of this source. So it is important to measure the temperature in transient mode, close to this local source as...
This paper describes a laboratory and methodology for the complete assessment of the reliability of microwave and power Gallium Nitride (GaN) devices. Examples related to deep level effects in GaN High Electron Mobility Transistors (HEMTs), to HEMT gate degradation and time dependent breakdown effects are described.
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