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The use of silicon carbide (SiC) semiconductor power devices has been studied and evaluated in a wide variety of converters. The work presented in this paper shows the performance of C2M SiC MOSFETs compared to Si devices operating as switching elements in a 5-level, single phase, multilevel converter. The paper describes the multilevel converter platform used to undertake the evaluation study and...
The adoption of the fast-switching silicon carbide (SiC) devices in the conventional two-level voltage source converters can bring issues such as crosstalk effect, high turn-on losses, electromagnetic interference (EMI), etc. The split output converter can decouple the upper SiC MOSFET from the lower SiC MOSFET in the same phase leg with suppressed crosstalk effect, lower turn-on losses, and reduced...
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