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The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage...
This paper deals with comparative assessment through static and dynamic measurements performed for full SiC-based MOSFET and Si-based IGBT power modules. The full SiC-MOSFET and Si-IGBT based power modules all have an identical voltage rating of 1.7 kV and a current rating of 300 A. Full SiC-MOSFETs presents a lowest on-resistance (RON) of 10.0 mΩ, blocking voltage of 1800 V and a threshold voltage...
Suppression of reverse recovery ringing from 3.3kV Si-IGBT SiC Schottky barrier diode hybrid was verified. Reducing loop inductance, consisting of internal module, busbar connection and capacitor, is effective. To realize low inductance within the module and external connection with busbar, the gap between p and n terminal is minimized whilst maintaining the creepage and clearance required by regulation...
In this paper, an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode have been analyzed in regards to parasitic...
This paper proposes a bidirectional bridgeless totem-pole interleaved power-factor-correction (PFC) converter using SiC MOSFETs as the front-end stage of an onboard charger for plug-in electric vehicles (PEVs). The proposed converter provides bidirectional operation enabling both grid-to-vehicle (G2V) charging and vehicle-to-grid (V2G) ancillary services. The converter is suitable for efficient G2V...
This paper shows a gate driver design for 1.7 kV SiC MOSFET module as well a Rogowski-coil based current sensor for effective shortcircuit protection. The design begins with the power architecture selection for better common-mode noise immunity as the driver is subjected to high dv/dt due to the very high switching speed of the SiC MOSFET modules. The selection of the most appropriate gate driver...
SiC MOSFET has low on-state resistance and can work on high switching frequency, high voltage and some other tough conditions with less temperature drift, which could provide the significant improvement of power density in power converters. However, for the bridge circuit in an actual converter, high dv/dt during fast switching transient of one MOSFET will amplify the negative influence of parasitic...
This paper presents a gate driver integrated circuit (IC) for Silicon Carbide (SiC) devices to fully utilize their high switching speed capabilities in a phase-leg configuration. Based upon the intrinsic properties prevalent in SiC devices, gate assist circuitry is integrated into a gate driver IC to control the gate voltages seen by both devices in a phase-leg during different switching transients...
This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic...
This paper proposes an improved wire-bonded design with a unique double-end sourced (DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to source the power module from the two ends, not only shortens the equivalent power loops but also provides a symmetrical structure for the paralleled devices. The proposed design achieved...
Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired...
The work presented in this paper focuses on the power flow control and study of three-limb high frequency transformer enabled three port Dual Active Bridge(DAB) converter, using 1200V and 1700V SiC devices. The advantage of using three-limb transformer is given by the low inter-winding parasitic capacitances due to placement of windings on different limbs and elimination of inter-winding insulations...
Multi-resonant converters like the CLLLC topology are known for their outstanding efficiency and high power density. Little information has however been published about the influences of secondary side diode junction capacitances on the output characteristics of the resonant converter. This paper presents a detailed analysis of these influences in the inductive working range and reviews practical...
The 15kV SiC IGBT has second higher dv/dt turn-off slope above the punch-through level resulting in EMI. Increasing gate-resistance also slows the first dv/dt causing increased switching loss. A snubber capacitor assisted turn-off solves these issues for a high power dual active bridge (DAB) converter based on this device, but the light load turn-on ZVS becomes hard to achieve. This paper proposes...
The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results...
We demonstrate a 900V SiC MOSFET with a record-low ON resistance of 10 mΩ in a TO-247 package. Due to their record low specific ON resistance, and a low Rds,On temperature coefficient, 900V SiC MOSFETs can far exceed the current densities of IGBTs in discrete packages. SiC MOSFETs also have a robust, low reverse recovery body diode which makes them suited to hard-switched and soft-switched topologies...
The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compare with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection...
Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic...
High speed variable frequency motor drives are required for marine applications, compressors for oil and gas industries, wind energy generation systems etc. Traditionally, low voltage high speed motor drives are used in such applications. This results in large currents at high power levels leading to large copper loss in the motor winding. Therefore, medium voltage (MV) drives are being considered...
In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented. The gate driver is designed in a 15V, 1.2 µm silicon carbide CMOS process, and simulated from 25 °C to 300 µC. The gate drivers are packaged and tested over a wide temperature range. Measured peak output current exceeds the 4 A source, 8 A sink current design goals at room temperature. The measured gate...
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