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Measuring the load current of drive inverters is still inevitable for a precise current control. In common industrial and automotive inverters hall effect based current sensors are widely used. [1] The presented novel current measurement method is based on an inductive current sensor like a Rogowski coil. This can be fabricated much smaller and cheaper than hall based current sensors and can be integrated...
Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic...
In this paper, detailed static characterization of the new 650 V/ 30 A GaN device from GaN Systems is presented. The on-resistance and output capacitance of this device are considerably low making GaN a viable option for high switching frequency (in the range of MHz) medium power applications (> 3 kW). A comprehensive examination of device characteristics and variation of device parasitics depending...
This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance...
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