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We investigated the use of the thermal shrinkage of SU-8 resist for applying strain into graphene grown by the chemical-vapor-deposition (CVD) method. We demonstrate that the shrinkage of resist deposited on top of graphene on a substrate induces a local tensile strain within a distance of 1–2 µm from the edge of the resist. The thermal shrinkage of SU-8 allows us to design the local strain in graphene...
As the diameter of semimetal nanowires decreases semimetal to semiconductor transition occurs as a consequence of quantum confinement. This enables the use of bandgap engineering to form a field-effect transistor near atomic dimensions and eliminates the need for doping in the transistor's source, channel, or drain for sub-5 nm transistors. The use of strain as a ‘technology booster’ in transistor...
In this paper we explore the benefit of combining High Resolution X-Ray Reciprocal Space Mapping (HR-RSM) and Dark-Field Electron Holography (DFEH) techniques for strain characterization of thin pMOS-like structures. We are able to simulate the measured HR-RSM from the displacement field extracted by DFEH. This is a first step developing High Resolution X-Ray Diffraction (HRXRD) as a viable technique...
This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge...
Realizing a germanium (Ge)-based monolithic light source requires high n-type doping, tensile strain, and an optical cavity. Here, we demonstrate the application of spin-on doping technique, and the use of free-standing structures to induce tensile strain on Ge micro-disks, which act as a simple micro-cavity.
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