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The production of Ge1-xSnx alloy nano-structures through high fluence Sn ion implantation at room temperature and subsequent rapid thermal annealing was investigated. Implant energy was set at 45 keV, aiming to produce a <100 nm thick nano-structured layer. Three high Sn implantation fluences were tested: 5×1015, 1×1015, 5×1014 at/cm2. First ion implantation was carried out at liquid nitrogen temperature...
CMOS utilizing high mobility Ge/III–V channels on Si substrates is expected to be one of the promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. In addition, Tunneling-FET (TFET) using Ge/III–V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. Thus, the establishment...
Realizing a germanium (Ge)-based monolithic light source requires high n-type doping, tensile strain, and an optical cavity. Here, we demonstrate the application of spin-on doping technique, and the use of free-standing structures to induce tensile strain on Ge micro-disks, which act as a simple micro-cavity.
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