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In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO2 nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from...
In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/−10 V program/erase voltage is around 3...
Self-supported SiO2 structures were fabricated from thermal SiO2/Si substrates by combining FIB direct writing and selective and anisotropic chemical wet etching of silicon. These structures, such as SiO2 overhangs on the edges of Si trenches, were then used as templates for ALD of Ta2O5 to form sealed nanochannels and cavities. The size of trenches formed by etching through openings in the SiO2 increases...
A different strategy to form dielectric thin films using atomic layer deposition is proposed, where the dielectric stack consists of three layers in which the middle layer is deposited at a higher temperature than the top and bottom layer. This multi-temperature dielectric stack in metal-insulator-metal capacitor offers improved electrical properties compared to a dielectric film deposited at a single...
We report optically sensitive multi-functional metal-insulator-semiconductor devices based on Pt nanoparticles, which were fabricated in-situ with the dielectric stack using atomic layer deposition on a silicon-on-insulator substrate. The devices exhibit non-volatile memory behavior, with a memory window that can be enhanced by optical illumination. Voltage stressed devices serve as highly sensitive...
Two dimensional, layered van-der Waals materials such as MoS2 are of fundamental as well as practical interest for use in novel device applications in the areas of electronics, spintronics, optoelectronics, solar energy conversion, and sensing. The properties of such atomistic, thin nanomembranes are strongly influenced by the interaction with their environment and substrate. In particular, the modification...
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