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We demonstrate an all-silicon N-P-N phototransistor integrated on a silicon waveguide. The device has a high responsivity of 10 mA/W under 5 V bias at the 1550 nm telecommunication band, larger than the all-silicon P-I-N and P-N photodetectors.
Loss mechanism of slot ring resonators based on straight bus-ring directional couplers is experimentally analyzed by characterizing add-drop ring resonators and ring enhanced Mach-Zehnder interferometers. The coupler is proved to be the main parasitic loss, thus giving interesting directions to improve slot waveguide micro-ring resonators for strong light-matter interactions.
A 300mm Si photonics platform has been established for optical multi-applications. For device fabrication process, the advanced CMOS technology can lead to the performance improvement of optical devices. State-of-the-art propagation loss values are obtained for optical waveguides of multi-thickness SOI structures in this platform and discussed them theoretically. 50×50mm2 large Si interposers with...
By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.
Recent progress on hybrid integration of III–V on Silicon devices using wafer bonding is presented focusing on hybrid tunable lasers and their applications for the next generation of access, metropolitan and long haul optical networks.
In this study we tuning the polymer properties in THz region by high performance inorganic nano/micro particles. Based on the organic-inorganic composites, a femto-second (fs) laser/THz radiation separating filter and an anti-reflective coating are proposed.
Highly transparent as well as very high refractive index titania-COP composites were prepared and their properties in terahertz (THz) region were characterized. Based on these composites a broadband (0.2–1.6 THz) antireflective (AR) layer was fabricated successfully by using a hot-embossing method.
Polystyrene was used to fabricate gradient index structure for terahertz antireflection via a hot-embossing process. Compared with a single non-structured antireflective layer, the gradient index structure increases transmittance by 20% and has broader enhanced bandwidth.
In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical signal processing.
We illustrate a 2×2 quantum photonic switch fabric using two-photon quantum interference in an integrated silicon microring resonator array. Our modeling demonstrates phase- or wavelength-selective routing of single photons at different output states.
We report on the design and fabrication of a new type of microtoroid high-Q silica resonators monolithically coupled to on-chip silicon nanowire waveguides. In order to enable monolithic waveguide coupling, the microtoroid geometry is inverted such that the resonator is formed by thermal reflow at the circumference of a hole etched in a suspended SiO2 membrane. This configuration is shown to be conducive...
Photonic crystal cavities in silicon-on-insulator platforms have been designed to achieve very high quality factors and/or far-field input/output coupling. In this paper I will review our works on the use of these cavities to realize: record-high-Q resonators by genetic optimization of the holes, and bright light emission in an electrically pumped light-emitting diode. Finally, I will discuss theoretical...
The bending loss of silicon slot waveguide is experimentally investigated at 1064 nm and the measured value is 4.1 dB/180° with radius of 15 µm. Consequently, tunable micro-rings are demonstrated based on such slot waveguides.
A novel variable optical attenuator (VOA) based on two coupled rings in silicon-on-insulator (SOI) waveguides has been proposed and experimentally demonstrated, from which an attenuation varying from 0 dB to 35 dB can be obtained.
High-efficiency wavelength conversion based on the quasi-phase-matching technique is proposed and simulated in a slot waveguide. Benefit from the tight light confinement and the high nonlinear material (silicon nanocrystal) filled in the slot region, a large nonlinear coefficient is achieved. With the linear phase-mismatch alternately changing between two values of the opposite signs, periodical attenuation...
With the help of the strong nonlinear optical response in silicon nanophotonic wire waveguides complex sources and devices can be integrated on a chip. We demonstrate mid-infrared wavelength translators and frequency combs Furthermore, we open up the possibility for the integration of nonlinear optical functions at telecom wavelengths by exploiting more exotic nonlinear interactions in silicon waveguides...
Novel fabrication process of SiNx/SiO2 waveguide based on sidewall oxidation of patterned silicon substrate is proposed. The fabrication time of the lower SiO2 cladding is about one third of that of the conventional process.
Broadband 1×4 thermo-optic switch is demonstrated based on four W2 photonic crystal waveguides with footprint of 17.6 µm×8 µm. Extinction ratio larger than 15dB is obtained over the bandwidth of 15±1 nm in each channel.
Effective monolithic integration strategies for high quality quantum III–V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
Membrane-buried heterostructure lasers are integrated on SiO2/Si substrate by using a direct bonding technique. The large optical confinement factor leads to ultralow operating energy, which is critical for the datacom and computercom networks.
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