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A 50nm topological-switching random-access memory (TRAM) was fabricated for the first time. A high-quality GexTe1−x/Sb2Te3 superlattice film enabled set and reset voltages of TRAM to be less than 40% of those of PRAM. Statistical analysis of 16kb data showed the reset voltage to be less than 1.2 V, the lowest as a TRAM test chip.
Critical switching current, Isw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Qw, becomes the order of 100–150fC. With the small Qw, MRAM starts to save energy consumption by 70–80% compared with a conventional memory system. Analysis of the write pulse-width dependence of Iw revealed a further potential of perpendicular...
We introduce a novel programming algorithm that is particularly suitable for 3D NAND. With larger design rules and charge trapping (CT) device 3D NAND is much less sensitive to interference therefore should not use elaborate and costly algorithms designed for scaled 2D NAND. By binary division of cell Vt into smaller groups the number of verification pulses can be reduced. For MLC/TLC which requires...
Internet and mobile application have been the driving force for semiconductor innovation in the past 10 years. In this paper, we will focus on the system requirement for today's and tomorrow's consumer gadgets from productivity laptop computers to wearable glasses or watches. We will start with everyone's favorite activity such as taking pictures and sharing with friends, listening to the YouTube...
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