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In order to support a wide set of communication standards and to accommodate different applications in a single device, broadband receivers are essential and inevitably in demand. A wideband low-noise amplifier (LNA), which is a key block in the design of broadband receivers for multiband wireless communication standards, is proposed. A differential common-gate (CG) LNA utilizing multiple-feedback...
The present work analyses 6T, 8T and 10T SRAM cell on the basis of the Data Retention Voltage (DRV) and its variation with temperature and sizing ratios. The reduction of power supply, for reduced power dissipation, is carried out in this paper. In this paper, DRV of a 6T, 8T and 10T SRAM was measured using Cadence tools at 45nm technology. The DRV of 6T SRAM cell simulated is compared with the DRV...
A fully integrated low power LNA is implemented using 65-nm RF CMOS technology for 2.14-GHz band. By taking the advantage of higher transition frequency of recent technologies, transistors are biased in the moderate inversion region and this permitted scaling down the supply voltage to 0.7 V. Further, the exploration of design spaces from strong to weak inversion led to the development of a low power...
In stress enabled technologies the drive strength of multi-fingered (MF) transistors varies with the number of fingers (NF) because of Layout Dependent Effect (LDE). This is an important issue because MF transistors are widely used in integrated circuits. In this paper, we investigate performance variability issues in basic analog building blocks, such as current mirrors, common source amplifiers,...
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