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In this paper, a 60 GHz power amplifier is presented in 65nm CMOS technology based on the transformerless load-modulated (TLLM) amplifier architecture. It is designed to obtain high efficiency at output power back-off. The amplifier has 12.5 dB small signal gain and 11.5 dBm saturated output power. Measurement results show that this amplifier has more than 8% drain efficiency (7% power-added efficiency)...
The design of a common-base (CB), power-combined, SiGe BiCMOS amplifier is reported. Wilkinson couplers are used for power splitting and combining at the input and output of the amplifier. The HBTs have three emitter fingers and each finger has a length of 2.7 μm and a width of 0.18 μm. The gain of the amplifier can be externally varied by biasing the HBTs from a 1.3–1.5 V dc supply applied to their...
In this paper, air-filled Substrate Integrated Waveguide (SIW) is proposed and demonstrated for the first time at U-band. This low-loss transmission line is developed on a low-cost multilayer Printed Circuit Board (PCB) process. The top and bottom layers may make use of an extremely low-cost standard substrate such as FR-4 on which base-band or digital circuits can be designed so to obtain a very...
This paper presents a two-way vector modulator integrated circuit aimed for millimeter wave phased array systems. The active vector modulator is based on the Cartesian topology. Phase can be tuned continuously 360 degrees and the usable gain control range is more than 10 dB. The chip includes a low-noise preamplifier and a buffer amplifier in both receive and transmit paths, which are coupled together...
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