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We demonstrate a simple method to increase the conductance of CuTCNQ nanorod film, using graphitic oxide. CuTCNQ nanorods are grown by a chemical method on prepatterned electrodes on glass substrate and as-grown nanorods are used to measure I-V at room temperature. The electrical conductance of CuTCNQ are then modified by graphitic oxide (GO) by dispersing it onto film of CuTCNQ nanorods. The conductance...
In this paper, a novel device structure named as partially insulated (Pi-OX) junctionless transistor (JLT) is proposed and the simulated results below 20 nm have been compared with existing silicon-on-insulator (SOI) JLT. Further, drain-induced barrier lowering (DIBL), subthreshold swing (SS), on-state drive current (ION), off-state leakage current (IOFF), ION/IOFF ratio and static power dissipation...
In this paper we report on the degradation mechanism of an organic diode which causes rupturing of the top electrode film and the conducting polymer film. Organic electronic diodes were fabricated and tested at various applied voltages. Analysis of characterization data shows that the degradation is caused by a combination of localized morphological changes due to localized Joule heating, thermal...
This paper presents synthesis and characterization of wurtzite-type zinc oxide (ZnO) mesoporous nanowires by a simple, cost-effective, electrospinning technique. The n-type semiconducting nanowires of ZnO were obtained from polyacrylonitrile (PAN) and zinc acetate (ZnAc) in N, N-dimethylformamide (DMF) after calcination treatment at 5500C for 1 hour. The as-synthesized ZnO nanowires were characterized...
Admittance spectroscopy of pristine AlGaN/GaN metal-semiconductor interface reveals the distributed trap activation energy in the order of 0.24 eV by mercury probe capacitance-voltage (C-V) measurements. The trap densities of states (Dit) of these traps were extracted in the range of ∼1.9×1012 eV−1cm−2 with the reverse bias voltage ranging from −5 Volts to 0 Volt. A very good fitting of admittance...
In this work, a free-standing nanofibers mat of conducting polymer, Poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) is fabricated. PEDOT:PSS solution is blended with widely studied water soluble polymers, poly vinyl alcohol (PVA) and poly ethylene oxide (PEO), and is electrospun. Electrospinning parameters such as applied voltage and flow rate are optimized and fibers of diameter...
An organic nanocomposite-based sensor was fabricated to detect Escherichia coli (E. coli) in water. The organic molecule with receptor groups for detection was selected such that the receptor group would bind to the functional groups on the cell wall of the E. coli. The conductivity change of the sensor due to the interaction of E. coli is monitored. The sensor is tested for detecting E. coli cell...
Light trapping forms an important aspect of solar cells to increase the short circuit current density, which has a direct impact on the efficiency of the solar cell. In this paper we have used a one-dimensional photonic crystal which acts as a Bragg reflector. The dielectric photonic crystal consists of 6 bilayers of silicon nitride and silicon oxynitride deposited at a low temperature of 200ºC using...
Surface plasmons are collective oscillations of free electrons, having electromagnetic fields localized at the metal-vacuum interface. Configuration of two metal surfaces separated by a vacuum region is used for the study. Surface plasma waves having amplitude maximum at the two metal-vacuum interfaces and minimum in the middle are investigated by deriving the relevant dispersion relation in the presence...
New nanostructured material, multi-layer graphene nanobelts, was used to form a thin conductive flexible transparent film used as sensitive layer in a resistive wearable sensor able to detect pressure and strain with high sensitivity and low power consumption.
We propose simple approximate expressions for capacitance and electrostatic force for fixed-fixed beam-based MEMS/NEMS devices subjected to direct electrostatic and fringing field effects. The configuration that are considered for study are fixed-fixed beam and bottom electrode, fixed-fixed beam and side electrode, and a combination of beam, bottom electrode and side electrode. The expressions are...
Sensing nodes are employed for intelligent ambient monitoring and information dissemination. The primary challenge in making a sensing node autonomous is the ability to power it continuously. The conventional method of powering these nodes through batteries has an associated drawback of periodic maintenance and replacement. Alternate methods of powering sensing nodes are gaining impetus with the advent...
To modulate the conductivity of channel as well as for controlling threshold voltage of the device doping is required. Sometimes this doping can be unintentional via adsorption of impurities. We have found by ab-initio density functional theory calculations that K and Nb atoms change the system into n-type, and Br changes into p-type if adsorbed on monolayer of MoS2. Similarly Cl, V and P introduce...
Silicon-Germanium is used as an alternative channel material for pFET in high-k metal gate-first technologies for 32 nm and beyond. However, gate-induced drain leakage (GIDL) is significant at nominal bias due to band-to-band tunneling (BTBT) at the gate-to-drain overlap surface and gate sidewall junctions. In this work, the results of numerical simulation are compared with experimental results for...
A two step kinetically controlled single-growth process for the formation of InN 2D flat films and an array of nano rods (NRs) on GaN nano wall network (NWN) template by Plasma Assisted Molecular Beam Epitaxy (PAMBE) is demonstrated here. Surface and bulk diffraction studies reveal that the rods and film exhibit high quality structural and optical properties, in comparison to those formed on bare...
In this paper, we have developed a 2-D model for the DC drain current of a tunneling field-effect transistor (TFET) considering the source and the drain depletion regions. Analytical expressions are derived for the surface potential, electric field and the band-to-band generation rate. The drain current is obtained by numerically integrating the generation rate across the entire device. The model...
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