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Hybrid inorganic/organic Cd-doped ZnO nanostructures called CZO nanohybrids were electrochemically synthesized on Ga-doped ZnO/Si. The CZO nanohybrids comprise alternating layers of organic surfactant and CZO inorganic phase. These lamellar structured nanohybrids were found to be c-axis oriented, perpendicular to the substrate with good crystallinity. During photoluminescence measurement, a strong...
Two-phase nanocomposites comprised of Zn1−xNixO/NiO (0.05 ≤ x ≤ 0.3) were grown by using sol-gel process with hydrated metal acetates as precursors. Thermal decomposition of the co-precipitated oxalate α-ZnNi(C2O4) yields wurtzite h.c.p. Zn1−xNixO and f.c.c. NiO together. The X-band electron spin resonance spectra provide the signatures of anisotropic spin interactions with long-range magnetic ordering...
This paper presents a two-dimensional (2D) analytical model for threshold voltage of fully depleted graded-channel silicon-on-insulator (SOI) MOSFETs. The two-dimensional Poisson's equation is solved in different channel regions with parabolic approximation by using suitable boundary conditions. The effect of different device parameters on device performance has been studied. Results confirmed that...
Plasmonic nanostructures in chiral geometries are suitable candidates for various device applications pertaining to optical polarization. These devices can show large chiro-optical effects, implying a strongly differential response to right and left circularly polarized light. In general, three-dimensional plasmonic structures show larger optical activity, but are typically not suitable for wafer-scale...
In the present study, GaN nanowall network (NWN) structures are grown using rf-plasma assisted molecular beam epitaxy (PA-MBE) system under highly nitrogen rich conditions over nitrided and bare c-plane sapphire substrates. Nitridation is carried out prior to growth for two of the samples and its effect on the crystal quality of the resultant nanowall structure is studied and compared with the same...
In this paper, the influence of gate-source and drain-source bias on the bias-stress stability and lifetime of pentacene-based low-voltage (−3 V) organic thin-film transistors (TFTs) built on plastic substrate has been investigated. The 10%-current-decay lifetime is used for analyzing the influence of applied bias on the bias-stress stability of TFTs, and to compare various biasing conditions. Our...
ZnO nanoparticles (ZNPs) were synthesized by wet chemical method using poly vinyl alcohol (PVA) templates. Uniform growth, high yield and excellent optical properties were observed in ZNPs synthesized under pulsed microwave irradiation (PMW). Moreover the dangling bonds of ZNPs prepared under PMW were passivated more effectively than in samples prepared without it. Strong UV emission peaks at ∼ 360...
In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V,...
We have fabricated inkjet-printed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistor by optimizing a cross-linked poly-4-vinylphenol (PVP) dielectric on glass substrate. The quality and integrity of the polymer dielectric has been studied for different weight percent of PVP and the poly(melamine-co-formaldehyde) as a cross-linking agent (CLA) in propylene glycol methyl ether...
AlGaAs/GaAs heterostructures having different thicknesses of AlGaAs layers have been grown by Molecular Beam Epitaxy. Detailed Structural characterization of these structures has been performed and discussed in this report. AlGaAs layer thicknesses have been measured by an electrochemical Capacitance-Voltage profiler by etch profiling and confirmed by field emission scanning electron eicroscopy and...
This paper discusses a detailed approach to the optimization of laser-fired contacts for the rear surface-passivated p-type crystalline silicon solar cell. To obtain a proper ohmic contact, there are various parameters which should be taken into account while making LFCs, such as pitch, pulse length (or duty cycle ratio), laser output power and number of pulses. Optimization methodology for forming...
In this paper, we report the potential of the doping-less (DL) double gate field effect transistor (DL-DGFET), for ultra low power (ULP) subthreshold logic applications. We demonstrated that the proposed DL-DGFET do not require any doping from source to drain region and it can perform significantly better than highly doped junctionless (JL) and abrupt S/D inversion-mode (IM) DGFETs. The DL-DGFET achieves...
Anodized titania, synthesized on oxidized silicon substrate, has been used as oxygen gas sensor. The as-anodized films resulted in a sensitivity of 5756% at 125°C, when exposed to 100% oxygen. The gas-sensing performance of anodized films has been evaluated with post-anodization treatment in de-ionized water and aqueous ammonia solution. The sensitivity increases to 8646% and 16599%, with post-treatment...
In the current paper, a systematic study is presented of step-by-step process-induced stress variation of a Sapphire/Silicon/high-k MOSFET, for various aspect ratios, W/L. A substantial value of compressive stress of about 1 GPa, suitable for hole mobility enhancement, has been obtained. It is observed that the nature of the induced stress depends heavily on device dimensions. The study has been carried...
Helical magnetic nanopropellers have been a subject of active research in the last few years. In this work we present the details of the numerical calculation to model their motion in the presence of thermal fluctuations. Also pertaining to their possible use in microfluidic devices, we have included the effect of adjacent walls. The results of our numerical calculations show non-Gaussian features...
Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model...
We report a two-dimensional simulation study of a dopingless TFET with a hetero-gate dielectric. The energy band gap on the source side is modulated using a hetero-gate-dielectric in a dopingless TFET to increase the source-side tunneling rate. The use of a hetero-gate-dielectric, only on the source side, will ensure that the ambipolar current is not enhanced due to the drain-side tunneling. We demonstrate...
A novel theoretical approach is developed for treating energy transfer interactions between a donor and an acceptor molecule in the proximity of a nanoshell. Motivated from the diverse applications and rich plasmonic features of plasmonic nanoshell for example, tuning capability of Surface Plasmon (SP) frequencies, greater sensitivity to the dielectric environment, and controllable redirection of...
A recent trend in biosensors and biomedical devices is the fabrication of compact, high aspect ratio and free-standing biocompatible structures with application as force sensors, microneedle-based drug delivery systems, array of chemical sensors, etc. SU-8 photoresist is a promising candidate to fulfill such structure. Poly(Dimethylsiloxane) has been used as the sacrificial layer to successfully release...
Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I — V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G — V characteristics show significantly different signatures of Gaussian and exponential traps which allow...
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