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In this paper, a high voltage SiC MOSFET module with series-parallel hybrid topology is presented and analyzed. The module consists of two uniform parts in parallel and each of the part includes three sub-parts in series. The sub-part contains three primary parts connected in string where each of these parts has a parallel of two SiC MOSFETs. These SiC MOSFETs are divided into six sub-modules, which...
The paper presents a gate driver for current-control power semiconductor devices such as BJT. The gate driver has a capability to reduce switching time duration of a power transistor, both in turn-on and turn-off transients. Besides, when the transistor is in static conduction periods, the driver gives a high driving current to the power transistor with holding up by a low supply voltage. This leads...
This paper analyzes the influence of package parasitic inductance of fast switching MOSFET in the transient operation. It is found that in the traditional common source MOSFET packages, the inductor in the source connection pin limits the switching speed and reduces the system stability by the gate oscillation. Therefore a package using separated connection for gate control of fast switching MOSFET...
Continuing to raise the bar for power conversion performance, eGaN FETs are steadily improving performance in high power density and high current applications. In this paper we will discuss the latest developments in DC-DC converters, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore's Law alive with significant gains in key...
Characteristics of fast recovery diode (FRED) type super junction MOSFET (SJ-MOS) are reported. The reverse recovery ruggedness (-di/dt ruggedness) of the SJ-MOS FRED is dramatically improved compared to that of non-FRED type, which is almost 16 times better.
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