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In this presentation, we will discuss the possibility of using ion implantation technology to enhance output power of GaN-based LEDs. We selectively implanted Ar and/or Si ions into three different substrates (i.e., GaN/sapphire template, flat sapphire substrate with in-situAlN nucleation layer, and flat sapphire substrate withex-situAlN nucleation layer). Using ion implantation, we successfully formed...
In nano-scale electronic devices, the understanding of thermal properties is important not only to achieve high performance and/or low power consumption but also to realize new-type of devices where high temperature by Joule-heating in nano structure is utilized. The collaboration between specialists on nano thermal engineering and electronic device engineers will be critically important.
On behalf of the Conference Committee, we would like to welcome you to the 2014 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). The 12th in its series, ICSICT 2014 goes to the beautiful city - Guilin for four days from Oct. 28th to 31th.
High mobility semiconductors such as InGas or Ge are needed to continue CMOS scaling. However, the passivation of their surfaces has tended to leave too many interface gap states (Dit) which cause Fermi level pinning, and hinder the operation of the FET. The physical principles of improved passivation are explained, in terms of using gate dielectrics which include a diffusion barrier, and also valence...
This paper presents a current-mode Serial Peripheral Interface (SPI) in a battery voltage monitoring (BVM) IC for electric vehicles (EVs). In the BVM system, multiple cascaded BVM ICs are required to communicate with the MCU, which places big challenges to the design of the bus interface circuits. A current-mode SPI interface of the BVM IC is presented in this paper to form a daisy-chain bus configuration...
A 0.18µm CMOS LNA for low-power and wide-band applications is presented in this paper. Based on a common-gate-common-source (CG-CS) noise-canceling topology, a resistive feedback LNA and a downward impedance transformer are introduced to save more power while maintaining wide-band input matching. Post simulation shows that the NF is lower than 2.6dB with 2.4dB minimum; S11<−13dB and S21=23dB from...
Thermal and electrical transport in FinFET with statistical variations is investigated by 3D coupled electro-thermal simulation, using statistical-variability-aware device simulator GARAND with built-in thermal simulation module. The module employs a new formula for the calculation of the thermal conductivity in the fin region with fin shape dependence. An SOI FinFET structure with combined statistical...
In this paper, an improved simulation methodology for ab-initio calculation on random charging/discharging of gate oxide trap is proposed and adopted for investigation on oxygen vacancy defect in SiO2 gate dielectric. Issues of unexpected high thermal barriers and oversimplified energy-position relationship of defect in conventional simulation are addressed and solved by the new method. The new methodology...
The threshold voltage, Vth, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for surface potential is obtained by solving Poisson's equation. Based on the potential model, an analytical expression for Vth is achieved, with quantum mechanical effects and SB lowering effect included. It is found that...
Metal-oxide RRAM device is promising for synaptic application. The intrinsic variations during synaptic training process affect the accuracy of neuromorphic computation. In this work, we investigate the influence of the resistance variations on the metal-oxide RRAM-based neuromorphic computation system. Atomic KMC simulation is performed to study the random migration of oxygen vacancy, which is responsible...
Low density parity check (LDPC) code is an error correct code that can achieve performance close to Shannon limit and it is widely adopted in communication systems such as WiMAX and Wi-Fi. This paper presents a design of a flexible LDPC decoder for WiMAX based on the NoC platform. The implementation adopts layered decoding algorithm and exploits high parallelism that lies in the algorithm. Considering...
A monolithic dual mode buck dc-dc converter is proposed in this paper. The converter operates in Peak-Current-Mode Pulse-Width-Modulation (PWM) with a 2 MHz switching frequency under the heavy load condition. And an Adaptive-On-Time Pulse-Frequency-Modulation (AOTPFM) is employed to suppress the output ripple voltage variations under the light load condition. The DC-DC converter has been implemented...
This paper presents a 65-nm CMOS 40-Gb/s PAM4 transmitter with power-efficient pre-emphasis. Switchable current sources are used in the pre-emphasis tap to eliminate power wasting. The pre-emphasis tap only injects current to the output nodes upon the voltage level transition of the output signal. Current does not flow through the pre-emphasis tap when there is no transition. Simulation results show...
8-T cell is proposed to improve stability and low-voltage operation in high-speed SRAM caches. However, the robustness consideration of near threshold SRAM design has not been included in the mainstream design methodology. In this work, taking 8-T cell as an example, it is the first time such a systematic design methodology guided by efficient yield analysis is applied to improve variability tolerance...
The scattering mechanisms are investigated for MOSFETs with gate length varying from 1000 nm to 32 nm in this paper. Although the carrier mobility should theoretically be independent on the gate length, using the universal mobility model it is found that as the gate length reduces the Coulombic scattering decreases while the phonon scattering and the surface roughness scattering increase with a decreasing...
Slow-Wave coplanar waveguide (SCPW) has its unique characteristics as a useful passive device. This paper present the full characterization and modeling for millimeter wave SCPW. The model is obtained in a simple extraction procedure with no additional tuning or optimization.Verified in the frequency domain up to 60 GHz, this equivalent circuit model is able to predict characteristic impedance, effective...
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