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High-performance Al0.3Ga0.7N/GaN high electron-mobility transistors (HEMTs) with 1 μm gate length have been simulated. The devices exhibited a transconductance of about 100 ms/mm at VDS = 9 V and a minimum noise figure (NFmin) of 0.79 dB at 10 GHz. Also we inserted a 1 nm AlN layer at the interface of Al0.3Ga0.7N/GaN as spacer layer. The AlN produces a larger conduction band offset (ΔEc), higher polarization...
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