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We report single-photon emission from electrically driven site-controlled InGaN/GaN dot-in-nanowires, fabricated from a planar single InGaN quantum well LED using a top-down approach. Each dot-in-nanowire's formation site, diameter, height and material compositions were precisely controlled.
InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.
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