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We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.
Thin film Ge1−xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 µm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 µm.
We propose a polarization splitting method based on near-field interference. Unlike conventional polarizers, our design does not absorb the undesired polarization but rather deflects light in a polarization-dependent manner. This could enable high efficiency polarization-resolved-imaging.
We fabricate photodetectors comprising silicon nanowires with elliptical cross sections, and show that their spectral responsivities depend on the incident light's polarization state. We perform polarization-resolved imaging using these photodetectors.
We experimentally demonstrate that, by varying their diameter, the visible-to-infrared reflectance spectra of arrays of vertical Ge nanowires can be tuned. The results could enable future nanowire-based photodetectors with tailored responsivity spectra.
We demonstrate the detection of subbandgap light in silicon nano pyramid using the process of internal photoemission in Schottky diode. The quantum efficiency is enhanced by using metal coated silicon nano pyramids.
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