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We propose a polarization splitting method based on near-field interference. Unlike conventional polarizers, our design does not absorb the undesired polarization but rather deflects light in a polarization-dependent manner. This could enable high efficiency polarization-resolved-imaging.
The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.
We present a new platform for mimicking heterostructure behavior within nanowires of a single material by using non-uniform strain. These pseudo-heterostructures have lithographically customizable band profiles and show effective carrier confinement at room temperature.
We experimentally demonstrate that, by varying their diameter, the visible-to-infrared reflectance spectra of arrays of vertical Ge nanowires can be tuned. The results could enable future nanowire-based photodetectors with tailored responsivity spectra.
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