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Holmium-doped ZBLAN fiber has proven to be an efficient high gain material in the 1.2 µm region. In this paper, single-mode fiber lasers and amplifiers at 1178 nm, 1190 nm, and 1200 nm are reported. Over 2 watts of continuous wave output power was achieved with a 10-cm long gain fiber.
We report a diode-pumped Yb:LYSO laser with a SESAM for mode-locking. Pulse with duration as short as 61 fs was obtained at repetition rate of 113 MHz. The average output power was 40 mW.
We demonstrate a mode-locked Nd3+,Y3+:SrF2 laser for the first time. Pumped with 1.5W continuous Ti:sapphire laser, average output power of 280mW was obtained with pulse duration of 181fs at central wavelength of 1057 nm.
We present a SESAM modelocked diode-pumped Yb:CaGdAlO4 laser with a 1.8-GHz repetition-rate, a 3.5-W average output power and a 60-fs pulse duration, which results in a record high peak power of 28.9 kW.
With an improved gain chip and SESAM we set new benchmarks for modelocked electrically pumped VECSELs, i.e. shortest pulses (2.47 ps), highest average power (53.2 mW), peak power (4.7 W) and repetition rate (18.2 GHz).
High power operation of a continuous-wave Alexandrite laser is reported. Output power of 2.6 W at 755 nm and tunability of 85 nm were achieved using 11 W of pump at 532 nm.
We report a high power Tm-doped fiber laser pumped by a 1173 nm Raman fiber laser. The slope efficiency is 47%, the maximum output power is 46 W and can be scaled to higher power.
Using a commercial, diode-side pumped Nd:YAG rod laser module, we obtain more than 53% extraction efficiency in fundamental mode with respect to multimode operation in a fully polarized beam.
We report over 20 W, 6 ps, 170 MHz, passive mode-locking of a Nd:YVO4 laser using χ(2)-lens formation in a LBO frequency doubling crystal. The laser is pumped at 808 nm with optical efficiency of 38%.
Two dual-wavelength operations of diode-pumped Nd:YVO4 laser were demonstrated at 1064.1 & 1073.1 and 1064.1 & 1085.3 nm with two intracavity birefringent plates. The output power ratio of the dual-wavelength output could be freely adjusted.
We demonstrate passive mode-locking of a Nd:Sc0.2Y0.8SiO5 laser using a semiconductor saturable absorber mirror. The pulse train shows output power of 0.5 W and pulse duration of 3.5 ps at repetition rate of 118 MHz.
We report multi-mode diode pumped, continuous-wave Cr:Colquiriite lasers with up to 2.54-W of near infrared (800–850 nm) and 0.9-W of blue (400 nm) output power, with optical-to-optical conversion efficiencies as high as 33%.
Output powers exceeding 1 W are achieved with a diode-pumped Tm,Ho:KLu(WO4)2 laser at 2078 nm at slope efficiency of ∼30% with respect to the absorbed power. Continuous tuning is possible over ∼180 nm.
We report on a single-frequency semiconductor disk laser which generates 22.1 W output power in continuous wave operation, at a wavelength of 1030 nm. The free-running linewidth is measured to be 3.2 MHz (apparatus limited).
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