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We demonstrate the first II–VI based short-wave (λ ≤ 4 µm) Quantum Cascade Detector. Peak responsivity and background limited detectivity of 0.1 mA/W and 2.5×1010 cm√Hz/W, respectively, were measured at 80 K.
We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.
We present the fabrication and characterization of a graphene stack that can function as the darkest material and serve as the basis for a new class of sensitive, high-speed photodetectors.
Thin film Ge1−xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 µm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 µm.
We propose a polarization splitting method based on near-field interference. Unlike conventional polarizers, our design does not absorb the undesired polarization but rather deflects light in a polarization-dependent manner. This could enable high efficiency polarization-resolved-imaging.
We fabricate photodetectors comprising silicon nanowires with elliptical cross sections, and show that their spectral responsivities depend on the incident light's polarization state. We perform polarization-resolved imaging using these photodetectors.
We experimentally demonstrate that, by varying their diameter, the visible-to-infrared reflectance spectra of arrays of vertical Ge nanowires can be tuned. The results could enable future nanowire-based photodetectors with tailored responsivity spectra.
Based on graphene plasmonic waveguides, we developed a graphene plasmonic photodetector to detect horizontally incident light signal. The photocurrent is the maximum at the graphene-metal interface and the time constant is less than 39.7 ms.
We theoretically compare surface- and volume-based photoelectron emission from spherical nanoparticles, obtaining analytical expressions for the emission rate in both mechanisms. We show that the surface mechanism prevails, being unaffected by detrimental hot electron collisions.
Quantum cascade detectors are intersubband photodetectors that offer a vast design freedom. By combining it with a novel photonic crystal cavitiy, a significant improvement of the detectors performance could be achieved.
By carefully designing a multi-quantum well infrared photodetector (QWIP) heterostructure, we present an asymmetric QWIP with a localized state in the continuum. A narrow photocurrent spectrum confirms the electron confinement above the barrier.
We demonstrate the detection of subbandgap light in silicon nano pyramid using the process of internal photoemission in Schottky diode. The quantum efficiency is enhanced by using metal coated silicon nano pyramids.
We demonstrated an easy-to-fabricate vertical flexible UV photodetector structure with ZnO nanocrystals embedded in a thin and cellulose reed membrane sandwiched between two evaporated electrodes. The device shows photoconductive effect with good performance.
The temporal response of a broadband, monolayer graphene photodetector based on the photothermoelectric effect is characterized. Pulse-coincidence and impulse response measurements indicate fast photodetection on the timescale of 10 ps.
We report on a 1550 nm tunable high-speed photodetector configured to exhibit wavelength-tracking behavior. This enables a low-cost WDM system showing resilience to wavelength drift.
A reflection metasurface is used to optimise the light transport within a scintillator detector dramatically reducing the time resolution. We present a structure design and potential improvements in Positron-Emission Tomography.
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