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We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {101̄1} nano-pyramid facets. The device physics will be discussed in details.
Highly efficient InGaN-based LEDs with embedded sidewall passivation cubic airvoids made by nanoimprint lithography were demonstrated. The LEDs with embedded airvoids exhibit a 45% enhancement of light output at 20 mA compared with conventional LEDs.
We demonstrated a high-power GaN-based light emitting diodes (LEDs) which have micro-hole array and nano-rods compound structure by nanoimprint lithography (NIL). The nanorods structure inside the micro-hole could efficiently guide the trapped light from the GaN epilayer. Therefore, the light output power of LED with micro-hole array and nanorods was as high as 1.27 times, as compared with standard...
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