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A fully integrated CMOS linear RF power amplifier (PA) that includes integrated on-chip input and output matching networks is presented. This PA consists of two-stage configuration, each of which adopts a differential cascode structure. A new gate bias network of the common source amplifier is proposed to suppress intermodulation distortion. The results of the simulation and the measurements of the...
A K-band power amplifier (PA) with adaptive bias circuitry is implemented in 90-nm CMOS technology. The two-stage transformer-coupled differential PA achieves a linear gain of 26.9 dB, a saturation output power (Psat) of 20.4 dBm, an output 1-dB compression point (P1dB) of 18.5 dBm, and a peak power-added-efficiency (PAE) of 17.3% at 21 GHz. With the on-chip adaptive bias control, the bias condition...
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