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Achieving optimal efficiency in FET-based power amplifiers used in envelope tracking (ET) architectures can be difficult, mainly due to the dynamic variation of drain-to-source capacitance (Cds) with applied drain voltage. If, for example class-F or inverse class-F high-efficiency modes are used, there is clearly a motivation to maintain devices in high-efficient states, over as much of the dynamic...
A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band...
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