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In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils and transferred over pre-patterned back-gated devices on Si/SiO2 substrate. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality before...
This paper presents a novel direction in leaky-wave phenomenon research: the generation of non-diffractive Bessel beams by leaky-wave modes. A radial waveguide loaded by a capacitive impedance sheet is used to support an azimuthally invariant leaky-wave mode whose normal electric-field component is a truncated, zeroth-order Bessel function. In particular, the generation of propagating Bessel beams...
This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order to derive a first approach for non-linear device modelling. As illustrated here with a Graphene Nano Ribbon...
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