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A V-Band solid-state power amplifier/combiner is demonstrated in this paper. 8-way radial-line power combiner/divider and microstrip-to-waveguide transitions are proposed and designed. The insert losses of the passive combiner/divider is 2.6 dB as tested in back-to-back configuration, which indicates about 0.3 dB insert loss of the combine/divider network, and exhibits a combining efficiency of 93%...
Microwave power transmission is one of the key technologies to realize solar power satellite. In this paper, the authors design a high efficiency GaN Class-F power amplifier at 2.45GHz. Power added efficiency is up to 78.8% and output power is 40.3dBm in simulation. Simulated results predict high performance of the proposed PA.
A 11W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 um T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5dBm and peak power-added-efficiency of 20% were measured at 29GHz with...
In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted...
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