The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Devices fabricated through TSMC 0.18 micron CMOS process are modeled and implemented in Agilent ADS for the circuit designs. Two low-noise, well impedance-matched radio frequency amplifiers working at various nearby center working frequencies, 2.6 GHz and 2.8 GHz, are proposed using Class-E power amplifier mechanism. Both are deliberately put in series such that both can couple with each other, The...
An envelope tracking power amplifier (ET PA) using a standard CMOS process for the 3GPP long-term evolution mobile terminals is presented. An efficiency of the CMOS power amplifier for the modulated signals can be improved combining with a highly efficient and wideband CMOS bias modulator. The CMOS PA has a two-stage differential common-source structure for high gain and large voltage swing. The bias...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.