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Recent advances of GaN Gate Injection Transistors (GITs) and their applications to power switching systems are reviewed. The GITs are fabricated on cost effective Si substrates in a large diameter up tp 6inch, which exhibit normally-off operations by the use of p-AlGaN over an AlGaN/GaN hetero-junction. The GIT is free from the current collapse up to 600V enabling reliable operation of the power switching...
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