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In this paper, we present an optimized RF LDMOS transistor structure based on modified CMOS technology. The drift region is improved to reduce the change rate of the output capacitor of the transistor and ameliorate the linearity of power amplifier. Hot Carrier Injection (HCI) is alleviated by reducing the electric field at the gate edge near the drain by optimizing the field plate and the doping...
An ultra-low-leakage RF pulse generator capable of producing very narrow RF pulses with small rising and falling time for short-range high-resolution radar and high-data-rate communication systems is developed using 0.18-μm BiCMOS technology. The RF pulse generator exhibits an extremely-low RF leakage implementing the RF leaking suppression technique, in which the RF leaking signal is cancelled by...
A low-power direct-conversion transmitter based on current-mode operation, which satisfies the IEEE 802.15.4 standard, is proposed and implemented in a 0.13⁁m CMOS technology. The proposed transmitter consists of DACs, LPFs, variable gain I/Q up-conversion mixer, a divide-by-two circuit with LO buffer, and a drive amplifier. By combining DAC, LPF, and variable gain I/Q up-conversion mixer with a simple...
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