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This paper presents an ultra-wideband and ultra-low-voltage compact power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOSFET differential pair with resistive feedback and a pMOSFET buffer. The power detector IC was designed, fabricated and fully evaluated using Fujitsu 65-nm CMOS technology. The detector IC exhibits an operation frequency from...
In this paper, we present an optimized RF LDMOS transistor structure based on modified CMOS technology. The drift region is improved to reduce the change rate of the output capacitor of the transistor and ameliorate the linearity of power amplifier. Hot Carrier Injection (HCI) is alleviated by reducing the electric field at the gate edge near the drain by optimizing the field plate and the doping...
A 0.18-μm SiGe BiCMOS concurrent dual-band power amplifier (PA) was developed. The PA can work in concurrent dual-band mode at 25.5 and 37 GHz as well as single-band mode at 25.5 or 37 GHz. The measured results show that, in the single-band mode, the dual-band PA exhibits gain of 21.4 and 17 dB, maximum output power of 16 and 13 dBm, and maximum power added efficiency (PAE) of 10.6 % and 4.9 % at...
This paper presents design and linearization of an inverse class-F RF power amplifier using a GaN HEMT transistor, which is operated at the band of 910MHz-950MHz. A harmonic control network is utilized to compensate the parasitic effect brought from the parasitic parameters network. The measured results with a 930-MHz continuous-wave (CW) signal illustrated that highly efficient operation is achieved...
The pulse-modulated polar transmitters have been developed to answer the call for the need of linear and efficient power amplification for wireless applications. The envelope of the modulated RF signal is converted into the pulse train by means of pulse width modulation or delta-sigma modulation. The power amplification of the pulse train can be performed by the highly efficient power amplifiers without...
This paper proposes a method to extract the wideband model of power amplifiers (PAs) with narrow band signals, so that the sampling rate of the analog digital converter (ADC) can be even lower than the bandwidth of the signal. By sweeping the frequency response with narrow band signals and combining the envelopes of input and output signals, a wideband model of PA is observed. The model can be used...
This paper presents a 40–50 GHz power amplifier (PA) with flat gain response using TSMC 90 nm CMOS technology. The PA is a three-stage design with a first stage single-ended amplifier to drive a two stage balanced amplifier. Cascode configuration is employed in each stage to provide high small-signal gain. A gain-boosting technique is introduced in the cascode configuration of the PA to extend high-frequency...
A full Ka-band solid-state power amplifier has been presented and designed using a waveguide-based spatial power-combining technique based on E-plane anti-phase probes. The power divider/combiner employed in this design provides not only a high power-combining efficiency over a full waveguide bandwidth, but also efficient heat sinking for the active power devices. A simple design approach for the...
This article presents a 4–6GHz power amplifier in a 0.25μm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz.
This paper presents a Q-band four stage power amplifier (PA) fabricated by 90nm CMOS process. In order to improve the output power of the PA, an eight-way distributed active transformer was used for power combining. The simulated insertion loss of the transformer power combiner is less than 1dB at 45 GHz. This paper also shows a way to design transformer baluns for impedance matching. The measurement...
In this paper, a novel band-limited two-dimensional (2-D) digital predistorter (DPD) is proposed to linearize wideband radio frequency (RF) power amplifiers in concurrent dual-band transmitters. It is achieved by introducing a band-limiting technique into the existing 2-D DPD model in order to resolve the bandwidth mismatching problem in wideband communication systems. Compared to the existing 2-D...
This work presents a new efficient multi-level intermediate frequency pulse width modulation (ML-IFPWM) power coding algorithm for switch-mode power amplifier. The merits of high power coding efficiency with distortion correction function are demonstrated by a FPGA implemented digital front end. Measurement results have shown power coding efficiency greater than 45%. To our knowledge, this is the...
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