The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper analyzes a high efficient SiC MOSFET based inverter without externally antipa-rallelled diodes. To this end, steady-state performances of MOSFET channel and its body diode are demonstrated; proper control and modulation technique is applied to realize synchronous rectification of the inverter and to minimize the conduction loss of body diodes. Power loss analysis of the inverter under various...
This study presents the capability to use conventional silicon power semiconductor devices (Si-IGBT, Si-CoolMOS™) at 200°C operating junction temperature in a BOOST converter for traction automotive application. For each die, nano-scale silver sintered die-attach has been used in order to guaranty an optimum heat transfer between the chip and the substrate. Electrical static characterizations (breakdown...
This paper presents the design, prototype development, operation and testing of a 1 kW, 800 V output all-SiC boost DC-DC converter using SiC MOSFET and SiC Shottky diode chips. The switching frequency is raised up to as high as 800 kHz and a 230 °C junction temperature has been reached by switching-loss dominant self-heating. High frequency switching characteristics of the proposed converter are evaluated...
The information of junction temperature is crucial for operation management of IGBT modules. In practice, junction temperature is typically estimated by using an electrothermal model. IGBT modules are subject to various aging processes during operation, some of which, e.g. substrate solder crack, changes the thermal impedance of an IGBT module. However, in the literature little work has included the...
Differential power processing (DPP) is a power electronics system architecture that configures DC-DC converters in parallel with the PV string to improve its power yield. The parallel nature of the DPP architecture brings a number of benefits such as low converter power rating and low power losses, all of which make DPP especially suitable for sub-module level maximum power point tracking (MPPT)...
This paper investigates inverter time ratings and short-time electrical and thermal limitations in peak duty intermittent-load motor drives. An inverter electro-thermal model is developed and validated to complement prior motor thermal models. The inverter model is used to assess short-time capabilities of IGBT inverters. The results show that the inverter is the thermal bottleneck for short-term...
There is little work done to study the nuances related to paralleling the higher speed SiC Mosfet devices when compared to Si devices. This paper deals with the parallel operation of packaged silicon carbide (SiC) MOSFETs. The parameters that affect the static and dynamic current sharing behavior of the devices have been studied. We also investigate the sensitivity of those parameters to the junction...
Insulated gate bipolar transistor (IGBT) failures are a major issue in modern power electronics applications. Two most dominated failure mechanisms of IGBTs are solder fatigue and bond wire wear-out. This paper proposes a new method to online monitor an IGBT's health condition by using the instantaneous junction temperature variation between present and the first operating cycles of the IGBT with...
The parasitic and proximity effects in multidie insulated-gate bipolar transistor (IGBT) modules lead to nonuniform distributions of junction temperature (TJ) and case temperature (TC) among different dies. This feature can be used to monitor the operating and health condition of multidie IGBT modules. This paper reports a comprehensive study on the distribution of TC and its influence on TJ estimation...
Excellent physical and electrical properties of SiC material make SiC JFETs extremely attractive for high power density, high temperature and high frequency power applications. With increased switching speed, a stable operation capability of the devices under unclamped inductive switching (UIS) conditions is critical for the reliable operation of power switching systems. In this work, the behaviors...
A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that it saves the trouble of obtaining the physical parameters. Besides, the effect of temperature on SiC JFET performance is taken into account. It is important because the physical parameters on materials and dimensions of a particular SiC JFET device are difficult to be...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.