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There is a current movement within the scientific, engineering, educational and entrepreneurial communities called “making.” Most electronics makers are familiar with hardware offerings Arduino™ and Xbee™, which are user friendly rapid prototyping platforms for microcontrollers and wireless networks respectively; however an equivalent solution for power electronics is not available at comparable cost...
The 15 kV SiC N-IGBT is the state-of-the-art high voltage power semiconductor device developed by Cree. The SiC IGBT is exposed to a peak stress of 10–11 kV in power converter systems, with punch-through turn-on dv/dt over 100 kV/μs and turn-off dv/dt about 35 kV/μs. Such high dv/dt requires ultralow coupling capacitance in the dc-dc isolation stage of the gate driver for maintaining fidelity of the...
Dead-times, power devices voltage drops and total output capacitance represent the most important sources of distortion of the average output voltage in voltage-fed PWM inverters. Their effect is a function of actual parameters of the drive system and of the operating conditions, and is often intolerable in many drives applications, thus requiring a proper compensation strategy. Many techniques are...
This paper describes a high-speed protection circuit for IGBTs subjected to hard-switching faults (HSF). The reverse transfer capacitance depends on a collector-emitter voltage and it produces a significant effect on a switching behavior not only under normal conditions but also under HSF conditions. A gate charge characteristic under HSF conditions differs from that under normal turn-on conditions...
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