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The emergence of gallium nitride (GaN) based power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with aging silicon (Si) power MOSFETs. In this paper, we will evaluate the ability of gallium nitride transistors to improve efficiency and output power density in high frequency resonant and soft-switching applications. To experimentally verify...
A PWM or quasi-square-wave (QSW) zero-voltage-switching (ZVS) non-isolated boost converter using enhancement-mode GaN (eGaN) FETs is reported in this paper. The new converter topology requires small number of passive components, minimizes the converter switching loss under high-voltage high-frequency operations, and offers low-voltage stress across power transistors. A transformer-based floating gate...
A high frequency, high efficiency bi-directional battery charger for Plug-in Hybrid Electric Vehicle (PHEV) is built with high voltage normally-off GaN-on-Si HFETs. The battery charger topology consists of a 500 kHz Full Bridge (FB) AD/DC stage and a 500 kHz Dual Active Bridge (DAB) DC/DC stage. The system functionality is verified and measured efficiency is 97% for the AC/DC stage and 97.2% for the...
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