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This paper presents a GaN Transistor based 90W ac/dc adapter with a Buck-PFC stage and an isolated Quasi-Switched-Capacitor (QSC) dc/dc stage. In the dc/dc stage, two different QSC converters are proposed. Compared to Flyback and LLC resonant converters, the QSC converters feature: 1) reduced voltage stress on the primary-side switches to 2/3 of the input voltage; 2) reduced voltage stress on the...
This paper investigates the fast switching characteristics and high temperature performance of the emerging 600 V GaN high-electron-mobility transistor (HEMT) for high efficiency / high temperature applications. First, the inherent switching performance of the GaN HEMT is demonstrated in the double pulse test. The GaN HEMT exhibits superior switching capability, with a di/dt reaching 9.6 A/ns and...
This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The high-voltage cascode GaN HEMT in traditional package has high turn-on loss in hard-switching turn-on condition, and severe internal parasitic ringing, which could possibly damage the gate of GaN HEMT, in hard-switching turn-off condition, due to package...
This paper describes dynamic characteristics and power loss analysis of a high-voltage GaN-HEMT in cascode. The GaN-HEMT is "normally-on" and fabricated on 6-inch Si substrate using our Si mass-production line. A figure of merit (a product of RDSon (m Ω) and Qg (nC)) of the GaN-HEMT in cascode is as low as 1400. Simple switching characteristics with resistive load and power efficiency measurements...
The emergence of gallium nitride (GaN) based power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with aging silicon (Si) power MOSFETs. In this paper, we will evaluate the ability of gallium nitride transistors to improve efficiency and output power density in high frequency resonant and soft-switching applications. To experimentally verify...
A PWM or quasi-square-wave (QSW) zero-voltage-switching (ZVS) non-isolated boost converter using enhancement-mode GaN (eGaN) FETs is reported in this paper. The new converter topology requires small number of passive components, minimizes the converter switching loss under high-voltage high-frequency operations, and offers low-voltage stress across power transistors. A transformer-based floating gate...
LLC Resonant converters have been popular in recent years by providing highly-efficient, compact isolated power conversion for numerous applications. 48V to 12V and 400V to 12V step-down isolated converters are often required in server, telecom and automotive applications. While the switching losses in LLC converters are eliminated due to zero-voltage switching, the primary-side switch output capacitance...
A high efficiency synchronous GaN half-bridge boost converter with fast switching and low overshoot is achieved by minimizing parasitic inductance and critical damping the gate drive. A normally-off GaN-on-Si 2.4kW synchronous halfbridge Multi-Chip Module (MCM) is designed with a power-loop inductance of ∼4nH using transmission-line techniques to minimize inductance. The gate circuit inductance is...
This paper describes the application of SPICE models that have been developed for very high power GaN transistors and their integrated drive circuitry. GaN devices that are expected to be used in automotive applications are required to operate at high temperatures and provide very high current operation. The characteristics of drive circuitry must be simulated along with the very large GaN devices...
This paper discusses the design of a multichip Gallium-Nitride (GaN) power module for high frequency power conversion. The module is designed with HRL 600 V GalliumNitride (GaN) enhancement mode HEMT device. To exploit the capability of fast switching with low loss from high voltage GaN devices, different layout structures have been analyzed to reduce power loop parasitic inductance and improve switching...
GaN HEMT devices exhibit improved performance in terms of switching speed and reduced on-state resistance, especially if low-voltage and high-frequency conditions are considered. In this paper, a high-power density quasi-resonant converter is proposed in order to improve both the maximum output power and the maximum operating frequency with GaN HEMT devices. Since the proposed converter operates as...
A low cost and compact isolated gate driver with Drive-by-Microwave technology is developed, which consists of 2.4 GHz GaN/Si transmitter and receiver chips and the butterfly isolation coupler that integrated in a printed circuit board based package. The fabricated DBM gate driver successfully demonstrated that it drove a GaN power switching device with a very fast switching. The fabricated DBM gate...
This paper investigates gate drive design for high voltage gallium nitride (GaN) high electron-mobility transistors (HEMT) in a cascade structure. High dv/dt and di/dt switching characteristics of GaN device and its influences on high-side gate drive are analyzed on an 8.4kW bidirectional multi-channel buck/boost battery charger operating in critical conduction mode (CRM). Driving candidates for high-side...
Gallium nitride (GaN) based power devices are becoming common place due to their ability to achieve higher efficiencies and higher switching frequencies than is possible with silicon (Si) power MOSFETs. With discrete eGaN® FETs capable of switching at slew rates beyond 40V/ns, the system performance is greatly impacted by aspects outside the power devices, such as high speed gate drivers and printed...
A high frequency, high efficiency bi-directional battery charger for Plug-in Hybrid Electric Vehicle (PHEV) is built with high voltage normally-off GaN-on-Si HFETs. The battery charger topology consists of a 500 kHz Full Bridge (FB) AD/DC stage and a 500 kHz Dual Active Bridge (DAB) DC/DC stage. The system functionality is verified and measured efficiency is 97% for the AC/DC stage and 97.2% for the...
In this paper, an new configurable low-side resonant gate driver circuit based on 5V CMOS process is presented. This gate driver is designed for current Gallium Nitride (GaN) power transistor working up to 10 MHz switching frequency. By updating driving signals and removing off-chip resonant inductors, this gate driver can be working as a conventional non-resonant gate driver. Under resonant gate...
Rapid advancement of gallium nitride (GaN) based device technologies enables the possibility to design inverters that have superior performance capabilities compared to Si-based inverters. It is prevalently acknowledged that GaN-based switching devices outperform the Si-based counterparts in many aspects such as lower power consumption, and faster switching frequencies. GaN devices will benefit many...
Compared with Si MOSFET, gallium nitride (GaN) power transistor has higher reverse conduction voltage drop due to the absence of body-diode, which will result in higher reverse conduction loss. Furthermore, the oscillation on the driving voltage is quite severe when the GaN transistor operates in high frequency condition, which is critical for GaN transistor because of its relatively narrow driving...
Commercial foundry 0.25µm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface...
This work presents a Power Electronics solution for an all-electric passenger boat. The proposed system is constructed with building blocks comprising interleaved half-bridge converters employing interphase transformer and Gallium Nitride FET semiconductors. The system employs two multi-level drives and an integrated harbor and onboard PV system. The PV battery charger has two stages. One converter...
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