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A PWM or quasi-square-wave (QSW) zero-voltage-switching (ZVS) non-isolated boost converter using enhancement-mode GaN (eGaN) FETs is reported in this paper. The new converter topology requires small number of passive components, minimizes the converter switching loss under high-voltage high-frequency operations, and offers low-voltage stress across power transistors. A transformer-based floating gate...
Motivated by the recent commercialization of gallium-nitride (GaN) switches, an effort was initiated to determine whether it was feasible to switch the flyback converter at 5 MHz in order to improve the power density of this versatile isolated topology. Leakage inductance, harmonic losses in the coupled windings, core loss, layout impedances, gate drivers, and other issues problematic at high frequency...
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