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This paper presents a fully integrated triple-band CMOS class-E power amplifier (PA) for WCDMA (1.9 GHz) and LTE (1.8 GHz and 2.6 GHz) applications. The triple-band operation is achieved by activating selectively transistor cells and matching the transistor cells with low/high-band on-chip transformers for the three different frequencies. The PA is fabricated using a 0.18-μm CMOS process and has a...
A fully integrated dual-mode CMOS power amplifier (PA) with nonlinear MOS capacitance compensation is presented using 0.18-μm RF CMOS process. The proposed technique is used to implement dual mode structure as well as reduces AM-PM distortion. Dual-mode output matching network using transmission line transformer (TLT) is implemented for efficient dual mode operation. With a supply voltage 3.5V, the...
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