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Two prototypes of a distributed amplifier (DA) were implemented in 65 nm CMOS based on low-pass and highpass artificial transmission lines (ATL). The characteristic impedance and the propagation factor of ATLs were analyzed by combining the lines with an approximate CMOS cascode model. The simulated gain for the low-pass ATL DA has a peak of 13 dB at 7 GHz, 3dB bandwidth is 14.6 GHz (from 4.3 to 18...
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