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We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the percolation threshold.
We propose InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric chirped dual-grating-gate structure which greatly enhances plasmon instabilities. The fabricated device demonstrates an intense stimulated emission of terahertz monochromatic radiation at cryogenic temperatures for the first time.
Plasmonic nanoantennas confine electromagnetic fields at infrared wavelengths to volumes of only a few cubic nanometers, resulting in huge local fields in the vicinity of the resonantly excited metal particles. We exploited these fields to enhance the infrared vibrational bands of molecular monolayers with ultra-high sensitivity.
In lateral photo-Dember emitters pulses of coherent terahertz radiation can be generated by ultrafast above bandgap laser illumination of the surface of a partially metallic masked semiconductor. We investigate the role of the metallic mask and how the emission depends on spot size and fluence.
Terahertz emission by ultrafast laser excitation of semiconductors is done conventionally in bulk wafers or thin films thicker than the optical penetration depth. Here we present counter-intuitive-results where enhanced terahertz emission is made possible by using ultrathin films of semiconductors.
We report on the observation of terahertz (THz) radiation emitted from monoclinic bismuth vanadate (BiVO4) and gold (Au) thin film interfaces, irradiated with femtosecond laser pulses. The emitted terahertz pulses show a second-order dependence on the pump power. THz radiation was measured for different thicknesses of BiVO4 and the possible reasons for this thickness dependence are also discussed.
We describe low loss microstrip transmission line with compact coplanar waveguide transitions for sub-terahertz application. The conducting transmission line is fabricated on the surface of a thin cyclic olefin copolymer dielectric layer. A vector network analyzer (VNA) has been used to obtain the transmission parameters and to validate our simulation results.
We demonstrate scanning near-field optical microscopy with a spatial resolution below 100 nm by using broadband synchrotron radiation in the infrared range provided by the Metrology Light Source. This approach opens up the possibility to perform Fourier transform infrared spectroscopy on a nanoscale.
THz emission from thin film Schottky junctions is enhanced using plasmonic nano-gratings. Enhancement factors of up to 5.6 are observed in the emitted electric field, corresponding to a power enhancement factor of ∼34.
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
The THz frequency range has proven to be a very interesting frequency range for imaging and spectroscopy. The smallest spatial feature that can theoretically be resolved is limited by diffraction to values of about half of a wavelength, which corresponds to 150 µ m for a frequency of 1 THz. To overcome this diffraction limit, terahertz near-field techniques have been developed. This talk describes...
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