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In this paper a noise model for phototransistors is presented. Noise measurements and Gummel measurements on four different phototransistors were performed to verify the noise model. In addition, the output noise current density was modeled and compared with the measurements. A maximum difference of less than 12 % is noticed.
GaN- and AlN-based light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Based on different theoretical models, several physical mechanisms have been proposed to explain the efficiency droop; however, conclusive experimental evidence is still missing for these proposals, and none of them is generally accepted. This presentation reviews and...
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